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Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask
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8.We find that the spike formation is almost independent of the laser pulse train frequency when the laser repetition rate is slower than 100 Hz and the translation velocity is 200 μm/s. Thus we simply vary the repetition rate (determined by the shutter) to control the average number of light pulses incident on the silicon surface.
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18.The power spectrum shows that the component with wave vector k depends on the gap between the silicon surface and the TEM grid. The amplitude decreases as m increases, except that the component with has near-zero amplitude for the range of gap values corresponding to our experiment. As we observe structures only with we expect that corresponds to a lifetime too great to be observed.
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