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Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at heterointerfaces
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10.1063/1.1557772
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    Affiliations:
    1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China
    2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
    3 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
    4 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China
    5 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
    6 Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
    Appl. Phys. Lett. 82, 1872 (2003); http://dx.doi.org/10.1063/1.1557772
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/content/aip/journal/apl/82/12/10.1063/1.1557772
2003-03-18
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1−xN/GaN heterointerfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/12/10.1063/1.1557772
10.1063/1.1557772
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