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Low-temperature layer splitting of (100) GaAs by coimplantation and direct wafer bonding
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10.1063/1.1567045
/content/aip/journal/apl/82/15/10.1063/1.1567045
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/15/10.1063/1.1567045
/content/aip/journal/apl/82/15/10.1063/1.1567045
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/content/aip/journal/apl/82/15/10.1063/1.1567045
2003-04-07
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/15/10.1063/1.1567045
10.1063/1.1567045
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