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Electrical properties of thermally oxidized metal–oxide–semiconductor diodes
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10.1063/1.1567811
/content/aip/journal/apl/82/15/10.1063/1.1567811
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/15/10.1063/1.1567811
/content/aip/journal/apl/82/15/10.1063/1.1567811
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/content/aip/journal/apl/82/15/10.1063/1.1567811
2003-04-07
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/15/10.1063/1.1567811
10.1063/1.1567811
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