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Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
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10.1063/1.1570515
/content/aip/journal/apl/82/17/10.1063/1.1570515
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/17/10.1063/1.1570515
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/content/aip/journal/apl/82/17/10.1063/1.1570515
2003-04-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/17/10.1063/1.1570515
10.1063/1.1570515
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