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Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
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10.1063/1.1572470
/content/aip/journal/apl/82/18/10.1063/1.1572470
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/18/10.1063/1.1572470
/content/aip/journal/apl/82/18/10.1063/1.1572470
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/content/aip/journal/apl/82/18/10.1063/1.1572470
2003-04-29
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/18/10.1063/1.1572470
10.1063/1.1572470
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