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Fabrication of a single-electron inverter in multiwall carbon nanotubes
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14. curves with different backgate voltages were independently measured for both SETs with and behaviors such as depicted in Fig. 4 were observed. The Coulomb diamonds are different from each other, and are not exactly diamond-shaped, especially for SET2, in that (1) the Coulomb diamonds are not always closed and (2) the boundary of the diamonds is not completely straight and rounded. Point (2) makes the correct estimation of the voltage gain of the SET difficult. Coulomb diamonds of SET1 are much closer to that for the ideal SET with respect to (1), compared with that of SET2. Note that the maximum Coulomb gap is larger in SET2 than that in SET1, as mentioned in the text. Although the measurement condition is not exactly same as that in the inverter operation in terms of the surface gate voltage values and , we may reasonably assume curves similar to those in Fig. 4 in the inverter operation.
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