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Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
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10.1063/1.1578539
/content/aip/journal/apl/82/21/10.1063/1.1578539
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/21/10.1063/1.1578539
/content/aip/journal/apl/82/21/10.1063/1.1578539
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/content/aip/journal/apl/82/21/10.1063/1.1578539
2003-05-20
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/21/10.1063/1.1578539
10.1063/1.1578539
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