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Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers
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10.1063/1.1579117
/content/aip/journal/apl/82/22/10.1063/1.1579117
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/22/10.1063/1.1579117
/content/aip/journal/apl/82/22/10.1063/1.1579117
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/content/aip/journal/apl/82/22/10.1063/1.1579117
2003-05-27
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/22/10.1063/1.1579117
10.1063/1.1579117
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