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Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry
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10.1063/1.1582376
/content/aip/journal/apl/82/23/10.1063/1.1582376
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/23/10.1063/1.1582376
/content/aip/journal/apl/82/23/10.1063/1.1582376
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/content/aip/journal/apl/82/23/10.1063/1.1582376
2003-06-02
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/23/10.1063/1.1582376
10.1063/1.1582376
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