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Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
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10.1063/1.1582373
/content/aip/journal/apl/82/24/10.1063/1.1582373
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/24/10.1063/1.1582373
/content/aip/journal/apl/82/24/10.1063/1.1582373
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/content/aip/journal/apl/82/24/10.1063/1.1582373
2003-06-10
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/24/10.1063/1.1582373
10.1063/1.1582373
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