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Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
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10.1063/1.1583140
/content/aip/journal/apl/82/24/10.1063/1.1583140
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/24/10.1063/1.1583140
/content/aip/journal/apl/82/24/10.1063/1.1583140
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/content/aip/journal/apl/82/24/10.1063/1.1583140
2003-06-10
2014-11-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/24/10.1063/1.1583140
10.1063/1.1583140
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