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Effects of interfacial nitrogen on the structural and electrical properties of ultrathin gate dielectrics on partially strain-compensated SiGeC/Si heterolayers
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10.1063/1.1583143
/content/aip/journal/apl/82/24/10.1063/1.1583143
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/24/10.1063/1.1583143
/content/aip/journal/apl/82/24/10.1063/1.1583143
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/content/aip/journal/apl/82/24/10.1063/1.1583143
2003-06-10
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/24/10.1063/1.1583143
10.1063/1.1583143
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