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Fabrication and characterization of thin-film transistors with high field-effect mobility
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10.1063/1.1577383
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    Affiliations:
    1 Institute for Material Research, Tohoku University, Sendai, 980-8577, Japan
    2 CREST, Japan Science and Technology Corporation, Kawaguchi, 332-0012, Japan
    3 Japan Advanced Institute of Science and Technology, Ishikawa, 923-1292, Japan
    4 CREST, Japan Science and Technology Corporation, Kawaguchi, 332-0012, Japan
    5 Institute for Material Research, Tohoku University, Sendai, 980-8577, Japan
    6 CREST, Japan Science and Technology Corporation, Kawaguchi, 332-0012, Japan
    Appl. Phys. Lett. 82, 4581 (2003); http://dx.doi.org/10.1063/1.1577383
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/content/aip/journal/apl/82/25/10.1063/1.1577383
2003-06-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of C60 thin-film transistors with high field-effect mobility
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/25/10.1063/1.1577383
10.1063/1.1577383
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