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Formation of patterned buried insulating layer in Si substrates by implantation and annealing in oxidation atmosphere
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10.1063/1.1586783
/content/aip/journal/apl/82/25/10.1063/1.1586783
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/25/10.1063/1.1586783
/content/aip/journal/apl/82/25/10.1063/1.1586783
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/content/aip/journal/apl/82/25/10.1063/1.1586783
2003-06-16
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of patterned buried insulating layer in Si substrates by He+ implantation and annealing in oxidation atmosphere
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/25/10.1063/1.1586783
10.1063/1.1586783
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