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Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)]
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/content/aip/journal/apl/82/25/10.1063/1.1589006
2003-06-16
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/25/10.1063/1.1589006
10.1063/1.1589006
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