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Passivation of defects in nitrogen-doped polycrystalline thin films by crown-ether cyanide treatment
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10.1063/1.1555267
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    Affiliations:
    1 Institute of Applied Physics, University of Tsukuba, CREST, Japan Science and Technology Corporation, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
    2 Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Corporation, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
    3 Institute of Applied Physics, University of Tsukuba, CREST, Japan Science and Technology Corporation, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
    Appl. Phys. Lett. 82, 1060 (2003); http://dx.doi.org/10.1063/1.1555267
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/content/aip/journal/apl/82/7/10.1063/1.1555267
2003-02-10
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Passivation of defects in nitrogen-doped polycrystalline Cu2O thin films by crown-ether cyanide treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/82/7/10.1063/1.1555267
10.1063/1.1555267
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