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Interfacial growth in gate dielectrics deposited using with and NO
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10.1063/1.1608488
/content/aip/journal/apl/83/13/10.1063/1.1608488
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/13/10.1063/1.1608488
/content/aip/journal/apl/83/13/10.1063/1.1608488
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/content/aip/journal/apl/83/13/10.1063/1.1608488
2003-09-23
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/13/10.1063/1.1608488
10.1063/1.1608488
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