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Calculation of effective dielectric constants for advanced interconnect structures with low-k dielectrics
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10.1063/1.1614438
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    Affiliations:
    1 Technology Development Group, Advanced Micro Devices, Inc., AMD-IBM-Sony-Toshiba Alliance, 2070 Route 52, Hopewell Junction, New York 12533
    2 Technology Development Group, Advanced Micro Devices, Inc., One AMD Place, P.O. Box 3453, Sunnyvale, California 94088
    3 Technology Development Group, Advanced Micro Devices, Inc., AMD-IBM-Sony-Toshiba Alliance, 2070 Route 52, Hopewell Junction, New York 12533
    4 Technology Development Group, Advanced Micro Devices, Inc., One AMD Place, P.O. Box 3453, Sunnyvale, California 94088
    Appl. Phys. Lett. 83, 2644 (2003); http://dx.doi.org/10.1063/1.1614438
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/content/aip/journal/apl/83/13/10.1063/1.1614438
2003-09-23
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Calculation of effective dielectric constants for advanced interconnect structures with low-k dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/13/10.1063/1.1614438
10.1063/1.1614438
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