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Deep traps in unpassivated and -passivated AlGaN/GaN high electron mobility transistors
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10.1063/1.1614839
/content/aip/journal/apl/83/13/10.1063/1.1614839
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/13/10.1063/1.1614839
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/content/aip/journal/apl/83/13/10.1063/1.1614839
2003-09-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/13/10.1063/1.1614839
10.1063/1.1614839
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