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Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
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10.1063/1.1615840
/content/aip/journal/apl/83/17/10.1063/1.1615840
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/17/10.1063/1.1615840
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/content/aip/journal/apl/83/17/10.1063/1.1615840
2003-10-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/17/10.1063/1.1615840
10.1063/1.1615840
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