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Characteristics of gate dielectrics on Si grown by metalorganic chemical vapor deposition
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10.1063/1.1622794
/content/aip/journal/apl/83/17/10.1063/1.1622794
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/17/10.1063/1.1622794
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/content/aip/journal/apl/83/17/10.1063/1.1622794
2003-10-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of LaAlO3 gate dielectrics on Si grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/17/10.1063/1.1622794
10.1063/1.1622794
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