No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Single-crystal organic field effect transistors with the hole mobility
1.H. E. Katz, A. Dodabalapur, and Z. Bao, in Oligo- and Polythiophene-Based Field-Effect Transistors, edited by D. Fichou (Wiley, Weinheim, 1998);
1.G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998);
1.F. Garnier, Chem. Phys. 227, 253 (1998);
1.H. E. Katz and Z. Bao, J. Phys. Chem. B 104, 671 (2000);
1.C. D. Dimitracopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).
2.S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998);
2.Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
3.J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, J. Appl. Phys. 69, 2339 (1991).
4.G. Horowitz, Adv. Funct. Mater. 13, 53 (2003).
5.C. D. Dimitracopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
6.G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).
7.Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 44, 1325 (1997);
7.H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Trans. Electron Devices 46, 1258 (1999).
8.V. Podzorov, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 82, 1739 (2003).
9.Ch. Kloc, P. G. Simpkins, T. Siegrist, and R. A. Laudise, J. Cryst. Growth 182, 416 (1997).
10.R. A. Laudise, The Growth of Single Crystals (Prentice-Hall, Englewood Cliffs, NJ, 1970).
11.K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981).
12.Since the studied devices are -type FETs, we reserve the term “source” for an electrode that is biased positively and injects holes, while the grounded electrode is called the “drain.”
13.The threshold voltage is defined as the limit of when →0.
14.The total number of the “bulk” charge traps per the unit area of the conducting channel can be estimated as where is the bulk concentration of traps, and is the effective channel thickness (⩽10 nm). The corresponding threshold voltage, associated with the bulk traps in the studied devices, is therefore very small (<0.1 V).
15.C. D. Dimitracopoulos, I. Kymissis, S. Purushothaman, D. A. Neumayer, P. R. Duncombe, and R. B. Laibowitz, Adv. Mater. (Weinheim, Ger.) 11, 1372 (1999).
16.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
17.A. B. Chwang and C. D. Frisbie, J. Phys. Chem. B 104, 12202 (2000);
17.P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2003);
17.J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys. 93, 6117 (2003).
18.The four-probe mobility is defined as where and are the distance and the voltage drop between the voltage probes, respectively. is measured by an electrometer with an input resistance Ω. The contact resistance has been determined as
Article metrics loading...
Full text loading...
Most read this month
Most cited this month