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Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
1.A. Kikuchi, R. Bannai, K. Kishino, C.-M. Lee, and J.-I. Chyi, Appl. Phys. Lett. 81, 1729 (2002).
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