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Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
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1.A. Kikuchi, R. Bannai, K. Kishino, C.-M. Lee, and J.-I. Chyi, Appl. Phys. Lett. 81, 1729 (2002).
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2003-10-20
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/17/10.1063/1.1622987
10.1063/1.1622987
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