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Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)]
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2003-10-20
2014-09-17
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Scitation: Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/17/10.1063/1.1622988
10.1063/1.1622988
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