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Engineering carrier confinement potentials in InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity
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10.1063/1.1622443
/content/aip/journal/apl/83/18/10.1063/1.1622443
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/18/10.1063/1.1622443
/content/aip/journal/apl/83/18/10.1063/1.1622443
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/content/aip/journal/apl/83/18/10.1063/1.1622443
2003-10-28
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/18/10.1063/1.1622443
10.1063/1.1622443
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