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Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with gate stacks
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10.1063/1.1635071
/content/aip/journal/apl/83/25/10.1063/1.1635071
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/25/10.1063/1.1635071
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/content/aip/journal/apl/83/25/10.1063/1.1635071
2003-12-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/25/10.1063/1.1635071
10.1063/1.1635071
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