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Defect reduction in a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
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2003-07-22
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect reduction in (112̄0)a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/4/10.1063/1.1593817
10.1063/1.1593817
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