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InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
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10.1063/1.1595716
/content/aip/journal/apl/83/4/10.1063/1.1595716
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/4/10.1063/1.1595716
/content/aip/journal/apl/83/4/10.1063/1.1595716
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/content/aip/journal/apl/83/4/10.1063/1.1595716
2003-07-22
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/4/10.1063/1.1595716
10.1063/1.1595716
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