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Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence
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10.1063/1.1595731
/content/aip/journal/apl/83/4/10.1063/1.1595731
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/4/10.1063/1.1595731
/content/aip/journal/apl/83/4/10.1063/1.1595731
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/content/aip/journal/apl/83/4/10.1063/1.1595731
2003-07-22
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/4/10.1063/1.1595731
10.1063/1.1595731
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