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Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions
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10.1063/1.1597990
/content/aip/journal/apl/83/5/10.1063/1.1597990
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/5/10.1063/1.1597990
/content/aip/journal/apl/83/5/10.1063/1.1597990
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/content/aip/journal/apl/83/5/10.1063/1.1597990
2003-07-30
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/5/10.1063/1.1597990
10.1063/1.1597990
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