No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers
1.For a review, H. J. Eichler, P. Günter, and D. W. Pohl, Laser-Induced Dynamic Gratings (Springer, Berlin, 1986).
2.R. K. Jain and M. B. Klein, in Optical Phase Conjugation, edited by R. A. Fisher (Academic, London, 1983), Chap. 10, pp. 307–415.
3.B. Taheri, J. Hays, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 68, 587 (1996).
4.C. A. Hoffman, K. Jarašiūnas, H. J. Gerritsen, and A. V. Nurmikko, Appl. Phys. Lett. 33, 536 (1978).
5.V. Mizeikis, K. Jarašiūnas, N. Lovergine, and P. Prette, J. Cryst. Growth 214/215, 234 (2000).
6.A. Miller, in Nonlinear Optics in Semiconductors II, edited by E. Garmire and A. Kost (Academic, New York, 1999), Chap. 5, pp. 287–312.
7.T. Wang, T. Shirahama, H. B. Sun, H. X. Wang, J. Bai, S. Sakai, and H. Misawa, Appl. Phys. Lett. 76, 2220 (2000).
8.H. X. Wang and S. Sakai, in Proc. Int. Workshop on Nitride Semiconductors, Nagoya, 2000, pp. 144–146.
9.Moreover, the linear interband carrier generation mechanism was confirmed experimentally by quadratic dependence of diffraction efficiency versus excitation.
10.V. Mizeikis, K. Jarasiunas, N. Lovergine, and K. Kuroda, Thin Solid Films 364, 186 (2000).
11.A. Dmitriev and A. Oruzheinikov, J. Appl. Phys. 86, 3241 (1999).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month