NOTICE:

AIP Publishing manuscript submission and processing system (PXP) is currently unavailable to users in China. We are working to resolve the issue as quickly as possible. We apologize for the inconvenience.

尊敬的中国作者和评审人:AIP Publishing (AIP出版公司)的论文发布系统(PXP)目前遇到一些技术问题。我们将为您尽快解决。因此带来的不便,我们向您表达我们诚挚的歉意!

Thank you for your patience during this process.

1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Arsenic penetration behavior and electrical characteristics of As-doped polycrystalline-silicon/high-k gate dielectric and films on Si (100) substrate
Rent:
Rent this article for
USD
10.1063/1.1602168
/content/aip/journal/apl/83/7/10.1063/1.1602168
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/7/10.1063/1.1602168
/content/aip/journal/apl/83/7/10.1063/1.1602168
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/83/7/10.1063/1.1602168
2003-08-12
2015-05-06
Loading

Full text loading...

This is a required field
Please enter a valid email address

Oops! This section, does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/7/10.1063/1.1602168
10.1063/1.1602168
SEARCH_EXPAND_ITEM