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Arsenic penetration behavior and electrical characteristics of As-doped polycrystalline-silicon/high-k gate dielectric and films on Si (100) substrate
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10.1063/1.1602168
/content/aip/journal/apl/83/7/10.1063/1.1602168
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/7/10.1063/1.1602168
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/content/aip/journal/apl/83/7/10.1063/1.1602168
2003-08-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/83/7/10.1063/1.1602168
10.1063/1.1602168
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