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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
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9.The effective swing voltage can be estimated from the formula where is the external voltage swing in our case), is the threshold voltage [see Fig. 1 (a)], is the drain current, is the total source series resistance, and is the voltage drop on the gated part of the channel. The total source-drain voltage can be written as Since where is the drain-source separation, most of the source-drain voltage drop in the linear region occurs across determined by the source-gate and drain-gate access regions. Therefore, can be neglected and can be determined from the slope of the output characteristic (the dotted line in Fig. 1). We observed well resolved resonant emission for Hence, for a saturation current we obtain and Therefore, the swing voltage can be estimated as
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11.A simple estimation of the order of magnitude of the drift velocity for our device can be obtained as For and the carrier density one obtains The value of in Eq. (3) may differ from since the velocity distribution in the channel is not uniform in the saturation regime, where the measurements were performed, but these values should be of the same order of magnitude.
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