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Morphological properties of GaN quantum dots doped with Eu
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10.1063/1.1690467
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    Affiliations:
    1 CEA/CNRS/UJF Research Group Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
    2 NGK Insulators, Ltd., 2-54 Sudacho, Mizuhoku, Nagoya, Japan
    3 CEA/CNRS/UJF Research Group Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
    Appl. Phys. Lett. 84, 2247 (2004); http://dx.doi.org/10.1063/1.1690467
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/content/aip/journal/apl/84/13/10.1063/1.1690467
2004-03-23
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphological properties of GaN quantum dots doped with Eu
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/13/10.1063/1.1690467
10.1063/1.1690467
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