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High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
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10.1063/1.1737798
/content/aip/journal/apl/84/18/10.1063/1.1737798
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/18/10.1063/1.1737798
/content/aip/journal/apl/84/18/10.1063/1.1737798
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/content/aip/journal/apl/84/18/10.1063/1.1737798
2004-04-20
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/18/10.1063/1.1737798
10.1063/1.1737798
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