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Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
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10.1063/1.1738938
/content/aip/journal/apl/84/18/10.1063/1.1738938
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/18/10.1063/1.1738938
/content/aip/journal/apl/84/18/10.1063/1.1738938
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/content/aip/journal/apl/84/18/10.1063/1.1738938
2004-04-20
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/18/10.1063/1.1738938
10.1063/1.1738938
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