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High mobility of pentacene field-effect transistors with polyimide gate dielectric layers
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12.We normally bake PEN film at 190 °C for 1 h. This prebake drastically reduces the thermal shrinkage of the base films during the curing process of polyimide gate insulators.
13.It is important to minimize the interval between the end of spin coating and the start of baking in order to avoid aggregation of the polyimide precursor or formation of droplets of polyimide precursors, both of which degrade the uniformity of the thickness of polyimide gate dielectric layers.
14.We have developed an approach to drill contact holes through polymeric insulators by a laser drill machine and realized integrated circuits with organic transistors: S. Iba, Y. Kato, T. Sekitani, H. Kawaguchi, T. Sakurai, and T. Someya (unpublished).
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