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Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots
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17.With the material parameters of Ref. 19, we find energies of −8.686, −8.442, −8.128, and −8.043 meV for the exciton ground state and the first three excited exciton states, respectively, and −17.264 meV for the biexciton ground state; exciton (biexciton) energy zero is given by the energy of the two-dimensional exciton (biexciton) of the narrow quantum well (see Ref. 13).
17.Note that we are not attempting a quantitative comparison of the total exciton and biexciton energies because of the well-known problems regarding the underestimation of the biexciton binding for the trial wave function under consideration; for a discussion, see, e.g., O. Heller, Ph. Lelong, and G. Bastard, Phys. Rev. B 56, 4702 (1997).
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