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Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface
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10.1063/1.1753065
/content/aip/journal/apl/84/20/10.1063/1.1753065
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/20/10.1063/1.1753065
/content/aip/journal/apl/84/20/10.1063/1.1753065
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/content/aip/journal/apl/84/20/10.1063/1.1753065
2004-05-03
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/20/10.1063/1.1753065
10.1063/1.1753065
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