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Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
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10.1063/1.1757022
/content/aip/journal/apl/84/22/10.1063/1.1757022
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/22/10.1063/1.1757022
/content/aip/journal/apl/84/22/10.1063/1.1757022
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/content/aip/journal/apl/84/22/10.1063/1.1757022
2004-05-12
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/22/10.1063/1.1757022
10.1063/1.1757022
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