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Negative bias-temperature instabilities in metal–oxide–silicon devices with and gate dielectrics
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10.1063/1.1757636
/content/aip/journal/apl/84/22/10.1063/1.1757636
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/22/10.1063/1.1757636
/content/aip/journal/apl/84/22/10.1063/1.1757636
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/content/aip/journal/apl/84/22/10.1063/1.1757636
2004-05-12
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/22/10.1063/1.1757636
10.1063/1.1757636
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