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Erratum: “Structure of stacking faults formed during the forward bias of diodes” [Appl. Phys. Lett. 82, 2410 (2003)]
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2004-05-21
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82, 2410 (2003)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/23/10.1063/1.1763232
10.1063/1.1763232
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