No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with gate stack
1.L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W.-J. Qi, R. Nieh, S. Gopalan, and J. C. Lee, Tech. Dig. VLSI Symp. 2000, 44.
2.R. Choi, C. Kang, B. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan, and J. C. Lee, Tech. Dig. VLSI Symp. 2001, 15.
3.H.-J. Cho, C. S. Kang, K. Onishi, S. Gopalan, R. Nieh, R. Choi, E. Dharmarajan, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2001, 659.
4.K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. Nieh, S. Krishnan, and J. C. Lee, Tech. Dig. VSLI Symp. 2002, 22.
5.R. Choi, K. Onishi, C. S. Kang, S. Gopalan, R. Nieh, Y. H. Kim, J. H. Han, S. Krishnan, H.-J. Cho, A. Shahriar, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2002, 613.
6.G. Groeseneken, H. E. Maes, N. Beltran, and R. R. De Keersmaecker, IEEE Trans. Electron Devices 31, 42 (1984).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month