1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry
Rent:
Rent this article for
USD
10.1063/1.1762984
/content/aip/journal/apl/84/24/10.1063/1.1762984
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/24/10.1063/1.1762984
/content/aip/journal/apl/84/24/10.1063/1.1762984
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/84/24/10.1063/1.1762984
2004-05-25
2014-08-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/24/10.1063/1.1762984
10.1063/1.1762984
SEARCH_EXPAND_ITEM