1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoluminescence study of -doped multiple quantum wells with different dopant position
Rent:
Rent this article for
USD
10.1063/1.1763976
/content/aip/journal/apl/84/25/10.1063/1.1763976
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/25/10.1063/1.1763976
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Low temperature photoluminescence spectra of the samples with different position of the doping. The inset shows the decay curves measured at the peak position for different samples at .

Image of FIG. 2.
FIG. 2.

The peak position of the emission as a function of temperature for the different samples.

Image of FIG. 3.
FIG. 3.

A simple sketch of the potential profile for (a) undoped, (b) well-doped, and (c) barrier-doped samples. The profile and the energy level without donors (thin lines) and with additional Coulomb potential of donors are shown for the well-doped sample (b).

Loading

Article metrics loading...

/content/aip/journal/apl/84/25/10.1063/1.1763976
2004-06-04
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/25/10.1063/1.1763976
10.1063/1.1763976
SEARCH_EXPAND_ITEM