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Ballistic transport in antidot lattices
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10.1063/1.1764945
/content/aip/journal/apl/84/26/10.1063/1.1764945
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1764945
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Longitudinal magnetoresistance at . Low : ballistic features due to antidots; high : Shubnikov–de Haas oscillations. Upper inset: Hall resistance, , of the antidot lattice. The dashed lines are the linear extensions of from the regions of and . Lower inset: an optical micrograph of the antidot lattice.

Image of FIG. 2.
FIG. 2.

Ballistic transport peaks, after subtracting a quadratic background, at different temperatures—from top to bottom: 0.4, 2.0, 5.0, 10, 20, 32, 40, and . Inset: low field of the antidot lattice at 0.4 K and , with their background fits shown as dotted lines, as well as of the lattice at .

Image of FIG. 3.
FIG. 3.

Linear dependence of the ballistic scattering rate as defined in the text. Lower inset: mobility scattering rate, , on the unpatterned Hall bar at zero gate voltage, vs . Upper inset: carrier density and mobility of the unpatterned Hall bar at gate voltages of 0, 3, and vs .

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/content/aip/journal/apl/84/26/10.1063/1.1764945
2004-06-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ballistic transport in InSb∕InAlSb antidot lattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1764945
10.1063/1.1764945
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