Longitudinal magnetoresistance at . Low : ballistic features due to antidots; high : Shubnikov–de Haas oscillations. Upper inset: Hall resistance, , of the antidot lattice. The dashed lines are the linear extensions of from the regions of and . Lower inset: an optical micrograph of the antidot lattice.
Ballistic transport peaks, after subtracting a quadratic background, at different temperatures—from top to bottom: 0.4, 2.0, 5.0, 10, 20, 32, 40, and . Inset: low field of the antidot lattice at 0.4 K and , with their background fits shown as dotted lines, as well as of the lattice at .
Linear dependence of the ballistic scattering rate as defined in the text. Lower inset: mobility scattering rate, , on the unpatterned Hall bar at zero gate voltage, vs . Upper inset: carrier density and mobility of the unpatterned Hall bar at gate voltages of 0, 3, and vs .
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