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Coulomb blockade in suspended -coated single-walledcarbon nanotubes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic cross section of devices with suspended grown directly on metal electrodes across a gap ion milled all the way through a self-supporting membrane. (b) image of a sample with as-grown suspended crossing a gap and bridging metal electrodes. Scale bar: . (c) image of the sample shown in (b) after it was coated with silicon nitride by . Scale bar: .

Image of FIG. 2.
FIG. 2.

(a) image of suspended nanotubes after being coated with silicon nitride by . Scale bar: . (b) image of two nanorods in the upper left of (a). Scale bar: .

Image of FIG. 3.
FIG. 3.

(a) image of one -coated nanotube bridging the source and drain electrodes covered by , before a top metal gate was patterned. Scale bar: . (b) Source-drain curves with gate voltage for the above–mentioned sample at room temperature (open triangles) and at a temperature (closed squares). Inset: curve near at . (c) Conductance vs gate voltage recorded under a dc bias of between source and drain at . Inset: A zoom-in view of the conductance peaks near .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coulomb blockade in suspended Si3N4-coated single-walledcarbon nanotubes