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Fabrication of linewidth and pitch features by nanoimprint lithography
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10.1063/1.1766071
/content/aip/journal/apl/84/26/10.1063/1.1766071
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1766071
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of the nanoimprint lithography process: (a) A low viscosity resist film is pressed with a mold to create a thickness contrast in the resist. The resist is then exposed to light, curing it to produce a rigid and durable tightly bonded polymer network that conforms the mold features. (b) The mold is separated from the polymer film. (c) Pattern transfer using anisotropic etching to remove residue resist in the compressed troughs.

Image of FIG. 2.
FIG. 2.

(a) Demonstration of ultrahigh density photocurable nanoimprint lithography with a image of cured polymer patterned by a mold with a pitch grating with linewidth. (b) of a mold showing 30 and pitch troughs. (c) of cured polymer with protruding 30 and pitch lines continuous over several hundred microns in length. These lines were fabricated from the mold shown in (b), clearly showing that no residue polymer remains in the mold after separation, and the pattern transfer fidelity is high.

Image of FIG. 3.
FIG. 3.

Demonstration of resolution photocurable nanoimprint lithography with application for single-molecule contacts. (a) images of a silicon oxide mold. (b) images of the imprinted resist after curing and mold separation. Mold features as small as were reliably reproduced in the resist. (c) images of contacts after evaporation of metal and lift-off of the resist. Contact gaps as narrow as can be fabricated.

Image of FIG. 4.
FIG. 4.

Demonstration of large area and uniform imprint over a silicon wafer: (a) After imprint of a period grating, and anisotropic etching, sections of the wafer were cleaved and examined under . The patterned polymer bilayer shows no indication of variation in critical dimension control, thickness, sidewall roughness, or aspect ratio. (b) A high magnification image of the polymer bilayer, showing the top cured resist, and underneath, the transfer polymer layer.

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/content/aip/journal/apl/84/26/10.1063/1.1766071
2004-06-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of 5nm linewidth and 14nm pitch features by nanoimprint lithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1766071
10.1063/1.1766071
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