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Formation of regular arrays of submicron GaAs dots on silicon
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10.1063/1.1766391
/content/aip/journal/apl/84/26/10.1063/1.1766391
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1766391
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Left) An AFM of a portion of the exposure electrodeposited gallium dot array before the photoresist was removed. The scale bar above the image indicates the feature height in micrometers. (Right) An SEM of a portion of the same array after photoresist removal and arsine annealing.

Image of FIG. 2.
FIG. 2.

(Left) An SEM of a portion of a GaAs dot array that has been exposed to of MOCVD GaAs growth. (Right) Photoluminescence spectra at from GaAs disks grown to diameter (curve A) and thick homoepitaxial GaAs (curve B) grown under similar conditions. Curve A was a exposure of a silicon CCD with slits, and is divided by . Curve B was a exposure with slits, and is divided by .

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/content/aip/journal/apl/84/26/10.1063/1.1766391
2004-06-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of regular arrays of submicron GaAs dots on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/84/26/10.1063/1.1766391
10.1063/1.1766391
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